L. Freeouf received his Ph. D. in Physics from
the University of Chicago in 1973 (Thesis advisor: Professor H.
Fritzsche). He spent a year as a Research Fellow at Harvard University,
and then worked for over 20 years at the IBM T. J. Watson Research
Center. He left IBM to form Interface Studies Inc., which performs
research and development in semiconductor devices, materials science,
and characterization. He joined academia as a Professor in 2000. He has
worked extensively in surface science, crystal growth, solid state
devices, and the optical characterization of solids. He is an expert in
Fermi level pinning, Schottky barriers, and passivation of
semiconductors. He is a Fellow of both the American Vacuum Society and
of the American Physical Society. He is a past Chairman of the Division
of Electronic Materials and Processing of the American Vacuum Society.
He served on the Editorial Board and as Associate Editor of the Journal
of Vacuum Science and Technology A. He has published over 100 papers on
surface science and semiconductor science and technology, and is the
co-holder of fifteen issued patents.