Profile

	John L. Freeouf received his Ph. D. in Physics from the University of Chicago in 1973 (Thesis advisor: Professor H. Fritzsche). He spent a year as a Research Fellow at Harvard University, and then worked for over 20 years at the IBM T. J. Watson Research Center. He left IBM to form Interface Studies Inc., which performs research and development in semiconductor devices, materials science, and characterization. He joined academia as a Professor in 2000. He has worked extensively in surface science, crystal growth, solid state devices, and the optical characterization of solids. He is an expert in Fermi level pinning, Schottky barriers, and passivation of semiconductors. He is a Fellow of both the American Vacuum Society and of the American Physical Society. He is a past Chairman of the Division of Electronic Materials and Processing of the American Vacuum Society. He served on the Editorial Board and as Associate Editor of the Journal of Vacuum Science and Technology A. He has published over 100 papers on surface science and semiconductor science and technology, and is the co-holder of fifteen issued patents.