Future research
nStabilizing multi-band gap
nStabilizing tunnel
nFuture technology
nFour layer band gap
nAlGaInP  – 2.0 eV
nGaAs       – 1.43 eV
nGaInPAs –  1.05 eV
nGe           –  0.664 eV
n
nEstimated potential of over 45 % efficiency