Space
station Today
New semiconductor alloy called indium
gallium arsenide nitride (InGaAsN) developed by Sandia National Laboratories
The new material, which may be used as an electricity-generating solar cell, has a potential 40 percent efficiency rate when put
into a multi-layer cell.
Consist of
four layers
*Top layer: indium gallium
phosphide
*next: gallium arsenide
*next: two percent
nitrogen with indium in gallium arsenide
*last: germanium
The first layer, absorbs yellow and green light, second absorbs between green and deep red.The arsenide nitride layer absorbs between deep red and infrared, and the germanium absorbs infrared and far infrared.
*Gallium
arsenide is tougher and more efficient
than crystal silicon
*Results
in reduced satellite mass and launch
cost and increased payload and
satellite mission.