Space station Today
New semiconductor alloy called indium gallium arsenide nitride (InGaAsN) developed by Sandia National Laboratories
The new material, which may be used as an electricity-generating solar cell, has a potential 40 percent efficiency rate when put into a multi-layer cell.
Consist of four layers
*Top layer: indium gallium phosphide
*next: gallium arsenide
*next: two percent nitrogen with     indium in gallium arsenide
*last: germanium


The first layer, absorbs yellow and green light, second absorbs between green and deep red.The arsenide nitride layer absorbs between deep red and infrared, and the germanium absorbs infrared and far infrared.

*Gallium arsenide is tougher and more efficient than crystal silicon
*Results in reduced satellite mass and launch cost and increased payload and satellite mission.