P. Möck, Atomic ordering in Self-assembled Epitaxial and Endotaxial Compound and Element Semiconductor Quantum Dot structures: The first review, Mat. Res. Soc. Symp. Vol. 776 (2003) Q5.4.1-5.4.6, poster

 

P. Möck, Y. Lei, T. Topuria, N.D. Browning, R. Ragan, K.S. Min, H.A. Atwater, Endotaxial growth mechanisms of Sn Quantum Dots in Si matrix, Mat. Res. Soc. Symp. Vol. 770 (2003) I.1.7.1 –1.7.6

 

P. Möck, K. Pierz, T. Topuria, N.D. Browning, Huizhen Wu, and Patrick J. McCann,  Atomic Ordering in Self-assembled Epitaxial II-VI and IV-VI Compound Semiconductor Quantum Dot Systems, Mat. Res. Soc. Symp. Vol. 749 (2003) W13.5.1 –W13.5.6

 

P. Möck, Y. Lei, T. Topuria, N.D. Browning, R. Ragan, K.S. Min, H.A. Atwater, Structural and Morphological Transformations in Self-assembled Sn Quantum Dots in Si matrix, Proc. 2003 Nanotechnology Conference and Trade show, Vol. 3, 74 - 78, February 23 - 27, 2003, San Francisco California), poster

 

P. Möck, Y. Lei, T. Topuria, N.D. Browning, R. Ragan, K.S. Min, H.A. Atwater, Formation mechanism of quantum dots in the Sn/Si System, Proc. 2nd Intern. Workshop on Quantum Nanostructures & Nanoelectronics, pp. 241 – 246, AIST-Tsukuba Research Center, September 9 - 11, 2002, Tsukuba, Japan

 

P. Möck, Y. Lei, T. Topuria, N.D. Browning, R. Ragan, K.S. Min, H.A. Atwater, Structural Transformations in self-assembled Semiconductor Quantum Dots as inferred by Transmission Electron Microscopy, Physical Chemistry of Interfaces and Nanomaterials, Jin Z. Zhang, Zhong L. Wang, Editors, Proc. of SPIE Vol. 4807 (2002) 71-82

 

P. Möck, T. Topuria, N.D. Browning, G.R. Booker, N.J. Mason, R.J. Nicholas, M. Dobrowolska, S. Lee, J.K. Furdyna, Internal self-ordering in In(Sb,As), (In,Ga)Sb and (Cd,Mn,Zn)Se nano-agglomerates/quantum dots, Appl. Phys. Lett. 79 (2001) 946 - 948

 

P. Möck, T. Topuria, N. D. Browning, L. Titova, M. Dobrowolska, S. Lee and J. K. Furdyna, Self-ordered CdSe quantum dots in ZnSe and (Zn,Mn)Se matrices assessed by Transmission Electron Microscopy and Photoluminescence Spectroscopy, J. Electron. Mater. 30 (2001) 748 - 755

 

P. Möck, Slip in GaAs substrates during molecular beam epitaxial growth: an X-ray topographic survey, J. Cryst. Growth 224 (2001) 11 - 20

 

P. Möck, Analysis of thermal treatment induced dislocation bundles in GaAs wafers by means of X-ray transmission topography and complementary methods, J. Appl. Cryst. 34 (2001) 65 - 75

 

P. Möck, Z.J. Laczik, G.R. Booker, Thermal processing induced plastic deformation in GaAs wafers, Mater. Sci. Engin. B 80 (2001) 91- 94

 

P. Möck, G.R. Booker, N.J. Mason, R.J. Nicholas, E. Alphandéry, T. Topuria, N.D. Browning, MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by means of AFM, CTEM, HRTEM and PL, Mater. Sci. Engin B 80 (2001) 112 - 115

 

P. Möck, T. Topuria, N.D. Browning, R.J. Nicholas, G.R. Booker, Atomic Self-ordering in Heteroepitaxially Grown Semiconductor Quantum Dots due to Relaxation of External Lattice Mismatch Strains, Mat. Res. Soc. Symp. Vol. 696 (2001) N8.8.1 - N8.8.6

 

P. Möck, T. Topuria, N. D. Browning, G.R. Booker, N.J. Mason, R.J. Nicholas, L.V. Titova, M. Dobrowolska, S. Lee, J.K. Furdyna, Self-ordering on a Multiple Length Scale in Certain Heteroepitaxial II-VI and III-V Compound Semiconductors Structures, Proc. 6th Intern. Symp. on Advanced Physical Fields Growth of Well-defined Nanostructures, 6th- 9th March, 2001, National Institute of Metals, Tsukuba, Japan, p. 251 - 255

 

P. Möck, G.R. Booker, N.J. Mason, E. Alphandéry, R.J. Nicholas, MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM, IEE Proc.–Optoelectron. 147 (2000) 209 - 215 (sorry a few of the images are missing in the *.pdf file)

 

P. Möck, Comparison of Experiments and Theories for Plastic Deformation in thermally processed GaAs Wafers, Cryst. Res. Technol. 35 (2000) 529 - 540, and Errata in Cryst. Res. Technol. 35 (2000) 1131

 

P. Möck, G.W. Smith, How to avoid plastic deformation in GaAs wafers during molecular beam epitaxial growth, Cryst. Res. Technol. 35 (2000) 541 - 548

 

P. Möck, T. Topuria, N. D. Browning, G.R. Booker, N.J. Mason, R.J. Nicholas, L.V. Titova, M. Dobrowolska, S. Lee, J.K. Furdyna, Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot, Mat. Res. Soc. Symp. Vol. 642 (2000) J6.3.1 -  J6.3.6

 

P. Möck, Thermal treatment induced dislocation bundles in GaAs substrates studied by scanning infrared polariscopy, visible-light interferometry, transmission electron microscopy, Makyoh and X-ray topography, Microsc. Microanal. 6 (2000) 1104 - 1105 (Suppl. 2)

 

P. Möck, G.R. Booker, E. Alphandéry, N.J. Mason, R.J. Nicholas, Self-organised Sb-based quantum dot structures studied by means of AFM, TEM and PL, Microsc. Microanal. 6 (2000) 1102 - 1103 (Suppl. 2)

 

P. Möck, K. Mizuno, B.K. Tanner, G. Lacey, C.R. Whitehouse, G.W. Smith, A.M. Keir, Strain Relaxation in InGaAs Epilayers on GaAs by Means of Twin Formation, Japan. J. Appl. Phys. 38 (1999) 3628 - 2631

 

P. Möck, G.R. Booker, E. Alphandéry, R.J. Nicholas, N.J. Mason, Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL, Inst. Phys. Conf. Ser. No. 164 (1999) 133 - 136

 

P. Möck, M. Fukuzawa, Z. Laczik, M. Yamada, G.W. Smith, G.R. Booker, B.K. Tanner, M. Herms, Dislocation bundles in GaAs substrates: an X-ray topography & diffraction, scanning infrared polariscopy, electron microscopy, Nomarski microscopy, and Makyoh topography assessment, Inst. Phys. Conf. Ser. No. 164 (1999) 67 - 72

 
There have been 20 more papers published within the last five years of which I am a co-author.

 

Last updated: June 5, 2003